- ホーム
- News release
News release
-
World’s first successful development of trench MOS type power transistor using gallium oxide epitaxial film
-
Successfully developed ultra low power consumption gallium oxide Schottky barrier diode
-
Start mass production of φ 2 inch gallium oxide epitaxial wafer
-
Development of next generation power device material, gallium oxide epitaxial wafer, Novell Crystal Technology, Inc. started manufacturing and selling