MBE Epitaxial Wafer

NCT’s β-Ga2O3 MBE (Molecular Beam Epitaxy) epitaxial wafers are designed for research use.

Available in 10×15 mm2 (010) orientation, with Si-doped, Undoped, and Si+Undoped doping options. Sn-doped (010) or Fe-doped (010) substrates are available as the underlying substrate. β-(AlxGa1-x)₂O₃ (010) epitaxial wafers are also available.

 

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10×15 mm2 β-Ga2O3 (010) epi-wafer (by MBE)