β-Ga₂O₃ (gallium oxide) is a next-generation wide bandgap semiconductor material with promising properties for high-voltage power devices. Compared to SiC and GaN, β-Ga₂O₃ offers a larger bandgap energy, faster crystal growth, and easier substrate processing — enabling high-performance power electronics at lower cost.

Below are the key characteristics and application areas of β-Ga₂O₃.