Novel Crystal Technology. Inc.
February 27, 2026

Novel Crystal Technology Accelerates Power Device Evolution with
150 mm Gallium Oxide Substrate Sample Shipments
– A strategic pivot from R&D to mass production; targeting cost-disruptive commercialization by 2029 through innovative “DG Method.” –

SAYAMA, Japan – Novel Crystal Technology, Inc. (Headquarters: Sayama City, Saitama Prefecture; President & CEO: Akito Kuramata; hereinafter “the Company”), the global leader in Gallium Oxide (β-Ga₂O₃) wafer development, announces it will begin shipping samples of 150 mm (6-inch) β-Ga₂O₃ substrates in March 2026. This milestone marks a definitive shift toward the large-scale industrial adoption of next-generation power devices.
The Power of β-Ga₂O₃: Efficiency Beyond SiC and GaN
β-Ga₂O₃ is a transformative material with a bandgap energy exceeding that of Silicon Carbide (SiC) and Gallium Nitride (GaN). It enables power devices to achieve higher breakdown voltage, lower energy loss, and extreme miniaturization. Produced via the low-cost “melt growth method,” these substrates offer a superior combination of high performance and scalability for railways, industrial equipment, and electric power systems.

150 mm β-Ga₂O₃ substrate

1. Background: Meeting Global Demand for High-Voltage Power
　Global electricity demand is on a relentless upward trajectory, driven by the rapid electrification of industrial and transportation sectors alongside the continuous construction of new AI data centers. This surge has intensified the requirement for “high-voltage, high-power” devices that deliver exceptional energy efficiency across the entire power supply chain— from power generation to transmission, distribution, and consumption.
　While β-Ga₂O₃ wafers were previously limited to 100 mm (4-inch) R&D uses, the industry requires 150 mm diameters to integrate with existing production lines. Novel Crystal Technology’s move to 150 mm β-Ga₂O₃ substrate samples is the first critical step toward full-scale mass production of β-Ga₂O₃ epi-wafers in 2029, providing the foundation for companies and research institutes to optimize 150 mm power device structures today.

2. Key Product Features
　・Proven EFG Growth Technology : Leveraging years of expertise with the EFG Method^*1 used for 100 mm β-
　　Ga₂O₃ substrates, the Company ensures reliable quality and stable supply for the new 150 mm β-Ga₂O₃ substrate
　　samples.
　・Industry-Standard Compatibility: The 150 mm size matches standard power device production lines, fostering an
　　ecosystem for rapid commercialization.
　・Early-Stage Development Foundation: By supplying high-quality monocrystalline substrates now, the Company
　　enables partners to advance epitaxial growth and process development ahead of the 2029 mass-production curve.

3. The Roadmap: Cost Disruption via the “DG Method”
　To achieve widespread adoption, the Company is introducing the DG Method^*2—an innovative growth technology that eliminates the need for expensive precious-metal crucibles. This breakthrough will enable a price point that surpasses SiC in cost-competitiveness.

　Strategic Timeline:
　　2027: Launch of 150 mm β-Ga₂O₃ epi-wafer samples.
　　2029: Full-scale mass production of 150 mm β-Ga₂O₃ epi-wafers using the DG Method.
　　2035: Targeted supply of 200 mm (8-inch) β-Ga₂O₃ substrates.

　As the leader in β-Ga₂O₃ technology, the Company remains committed to driving energy efficiency and realizing a sustainable, electrified society.
　Further details on the research results related to these samples will be presented during the 73rd JSAP Spring Meeting 2026 at Institute of Science Tokyo (Ookayama Campus) between March 15 and 18, 2026 (Presentation No. 17p-W9_324-7).

Technical Glossary
*1 EFG (Edge-defined Film-fed Growth) Method
　 A highly reliable technology using a die to grow plate-shaped single crystals. It offers excellent shape control and is
　 already proven at the 100 mm scale.

*2 DG (Drop-fed Growth) Method
　 A next-generation single-crystal growth technology that eliminates the need for crucibles made of precious-metal
　 (iridium). This dramatically reduces material and equipment costs. The DG Method is being developed as part of the
　 “Key and Advanced Technology R&D through Cross Community Collaboration Program / Development of Material
　 Technology for High-Quality and High-Efficiency Power Devices / High-Frequency Devices / Development of β-Ga₂O₃
　 wafers, power devices and power modules” a project commissioned by the New Energy and Industrial Technology
　 Development Organization (NEDO).

4. For more information, please contact
　　Sales Department, Novel Crystal Technology Tel: +81-3-6222-9336