menu
Home
Products
HVPE
MBE
Substrates
β-Ga
2
O
3
Company
Message
Company Profile
Organization
News
Notification
News release
Events
Contact
日本語
Home
Blog
2017
News release
2015
2017
2019
2021
2022
2017.11.28
World’s first successful development of trench MOS type power transistor using gallium oxide epitaxial film
2017.9.12
Successfully developed ultra low power consumption gallium oxide Schottky barrier diode
2017.9.12
Start mass production of φ 2 inch gallium oxide epitaxial wafer
RETURN HOME
PAGE TOP
