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Standard specifications of Φ2 inch HVPE gallium oxide epitaxial wafers
Epitaxial layer (Growth method: HVPE)
Epitaxial layer | Specification |
---|---|
Dopant | Si(n-type) |
Doping concentration | Specify a value in the range between 2x1016 and 9x1016 cm-3 |
Thickness | Specify a value in the range between 5 and 10 μm |
Wafer
Property | Specification |
---|---|
Dopant | Sn (n-type) |
Doping concentration | 1-9x1018 cm-3 |
Orientation | (001) |
Size | Φ2 inch |
Thickness | 0.65 mm |
XRD FWHM | ≦350 arcsec |
Off set angle | 0°±1° |
Remarks
1 These products must be used for research and development purposes only.
2 The substrates must not be used as a seed crystal.
3 The specifications are subject to change without notice.