Φ2 inch Epitaxial Wafer Grown by HVPE

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Standard specifications of Φ2 inch HVPE gallium oxide epitaxial wafers

Epitaxial layer (Growth method: HVPE)

Epitaxial layerSpecification
DopantSi(n-type)
Doping concentrationSpecify a value in
the range between
2x1016 and 9x1016 cm-3
ThicknessSpecify a value in the
range between 5 and 10 μm

Wafer

PropertySpecification
DopantSn (n-type)
Doping concentration1-9x1018 cm-3
Orientation(001)
SizeΦ2 inch
Thickness0.65 mm
XRD FWHM≦350 arcsec
Off set angle0°±1°

Remarks
1 These products must be used for research and development purposes only.
2 The substrates must not be used as a seed crystal.
3 The specifications are subject to change without notice.
Φ2-inch-Epitaxial-Wafer-Grown-by-HVPE


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