1 kV Ga2O3 trench SBDs and normally-off FETs were successfully developed!

We have successfully demonstrated >1 kV Ga2O3 trench MOS-type SBDs and normally-off FETs with “Jena-Xing Group” at Cornell University. These results are published in Applied Physics Letters and IEEE Electron Device Letters.

■1 kV Ga2O3 trench MOS-type SBDs
Article title: 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
Journal title: Applied Physics Letters, 113, 202101 (2018)
DOI: 10.1063/1.5052368

■1 kV Ga2O3 trench MOS-type normally-off FETs
Article title: Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV
Journal title: IEEE Electron Device Letters, Vol. 39, No. 6 (2018)
DOI: 10.1109/LED.2018.2830184

Notice

  1. 2019.03.15

    SEMICON China 2019

  2. 2018.12.13

    Photonics West 2019

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